| PART |
Description |
Maker |
| MA733TX MA367TX |
SILICON, UHF BAND, MIXER DIODE
VHF-UHF BAND, SILICON, VARIABLE CAPACITANCE DIODE
|
PANASONIC CORP
|
| BAT17 |
SILICON, UHF BAND, MIXER DIODE
|
GENERAL SEMICONDUCTOR INC
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| 2SC4245 E000921 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS
From old datasheet system
TV TUNER, UHF MIXER APPLICATIONS VHF~UHF BAND RF AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| KDV154 KDV154A KDV154B |
TV VHF, UHF tuner AFC VCO for UHF band radio
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| 2SC3120 E000792 SC3120 |
TRANSISTOR (TV TUNER/ UHF MIXER/ VHF~UHF BAND RF AMPLIFIER APPLICATIONS)
TRANSISTOR (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS)
TV TUNER, UHF MIXER APPLICATIONS VHF~UHF BAND RF AMPLIFIER APPLICATIONS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 1N53 |
SILICON MIXER DIODE SILICON, KA BAND, MIXER DIODE, DO-36
From old datasheet system
|
Advanced Semiconductor, Inc.
|
| Q62702-F1582 BF569W Q62702-F1322 |
From old datasheet system
PNP Silicon RF Transistor (For oscillators mixer and self-oscillating mixer stages in UHF TV-tuner)
PNP Silicon RF Transistor kein Status
PNP Silicon RF Transistor (For oscillators, mixer and self-oscillating mixer stages in UHF TV-tuner)
NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) NPN硅射频晶体管（低失真输出天线的宽带和电信放大级）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| ADN9001-91 AMM9001-91 ADN3002-23 ADN3002-51 ADN300 |
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, KA BAND, MIXER DIODE
|
ADVANCED SEMICONDUCTOR INC
|
| GC9943-S12-127A GC9943-S12-129A GC9941-TCC-127B GC |
SILICON, HIGH BARRIER SCHOTTKY, C BAND, MIXER DIODE
SILICON, HIGH BARRIER SCHOTTKY, KU-K BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, KU-K BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
|
MICROSEMI CORP-LOWELL
|
|
